Sense amplifier connecting/disconnecting circuit arrangement, and method for operating such a circuit arrangement

ABSTRACT

The invention relates to a method for operating a sense amplifier connecting/disconnecting circuit arrangement, and to a sense amplifier connecting/disconnecting circuit arrangement, in particular for a semiconductor memory device, including a switching device for connecting a sense amplifier device to a bit line or to a cell field region, respectively, and for disconnecting the sense amplifier device from the bit line or from the cell field region, respectively, as a function of the state of a control signal applied at a control line; a driver device for driving the control signal, wherein an additional device, in particular an additional switch is provided, by means of which a change of state of the control signal applied at the control line can be effected.

CLAIM FOR PRIORITY

This application claims the benefit of priority to German application number 10339894.5, filed on Aug. 29, 2003, the contents of which are hereby incorporated by reference.

TECHNICAL FIELD OF THE INVENTION

The invention relates to a sense amplifier connecting/disconnecting circuit arrangement, and to a method for operating such a circuit arrangement.

BACKGROUND OF THE INVENTION

With semiconductor memory devices, one differentiates between so-called functional memory devices (e.g. PLAs, PALs, etc.), and so-called table memory devices, e.g. ROM devices (ROM=Read Only Memory), and RAM devices (RAM=Random Access Memory or write-read memory, respectively).

A RAM device is a memory for storing data under a predetermined address and for reading out the data under this address later.

The corresponding address may be input in the RAM device via so-called address input pins. For inputting and outputting the data, a plurality of, e.g. 16, so-called data input/output pins (I/Os or Inputs/Outputs) are provided. By applying an appropriate signal (e.g. a Read/Write signal) to a write/read selection pin, it can be selected whether (currently) data are to be stored or to be read out.

Since it is intended to accommodate as many memory cells as possible in a RAM device, one has been trying to realize same as simple as possible. In the case of so-called SRAMs (SRAM=Static Random Access Memory), the individual memory cells consist e.g. of few, for instance 6, transistors, and in the case of so-called DRAMs (DRAM=Dynamic Random Access Memory) in general only of one single, correspondingly controlled capacitor, with the capacitance of which one bit each can be stored as charge. This charge, however, remains for a short time only. Therefore, a so-called “refresh” must be performed regularly, e.g. approximately every 64 ms.

For technological reasons, the individual memory cells in memory devices, in particular DRAM devices, are arranged positioned side by side in a plurality of rows and columns—in a rectangular matrix (regularly divided into a plurality of cell fields) or in a rectangular array (regularly divided into a plurality of cell fields).

In order to obtain a correspondingly high total storage capacity, and/or to achieve a data read or write rate as high as possible, instead of one single array, there may be provided a plurality of, e.g. four—substantially rectangular—individual arrays in one single RAM device or chip (“multi-bank chip”) (so-called “memory banks”).

In order to perform a write or read access, a particular, predetermined sequence of instructions must be gone through:

For instance, by means of a word line activating instruction (activate instruction (ACT)), a corresponding word line—in particular assigned to a particular array—(and defined by the row address) is first of all activated.

The result thereof is that the data values stored in the memory cells assigned to the corresponding word line are read out by the sense amplifiers assigned to the corresponding word line (“activated state” of the word line).

Subsequently—by means of an appropriate read or write instruction (Read (RD) or Write (WT) instruction)—it is caused that the corresponding data—then exactly specified by the corresponding column address—are appropriately output by the corresponding sense amplifier(s)—assigned to the bit line specified by the column address—(or—vice versa—the data are read into the corresponding memory cells).

Next—by means of a word line deactivating instruction (e.g. a precharge instruction (PRE instruction))—the corresponding word line is again deactivated, and the corresponding array is prepared for the next word line activating instruction (activate instruction (ACT)). The above-mentioned sense amplifiers are each arranged in a sense amplifier region positioned between two cell fields, wherein—for reasons of space—one and the same sense amplifier may be assigned to two different cell fields each (namely the two cell fields directly adjacent to the corresponding sense amplifier region) (so-called shared sense amplifiers).

Depending on whether data are to be read out from the cell field positioned at the left or at the right next to the respective sense amplifier (or the cell field positioned above or below the respective sense amplifier), the corresponding sense amplifier is connected to the corresponding cell field by means of appropriate switches (in particular to the corresponding bit line assigned to the respective cell field) (or is connected electrically with the corresponding cell field, in particular the corresponding bit line assigned to the respective cell field), or is disconnected from the corresponding cell field (or the corresponding bit line assigned to the respective cell field) (or disconnected electrically from the corresponding cell field (or the corresponding bit line assigned to the respective cell field).

The corresponding switches effecting the connecting or disconnecting, respectively, in particular transistors, are controlled by an appropriate control line (MUX lines, in particular a right MUX line (MUX_(R) line) and a left MUX line(MUX_(L) line))—positioned—parallel to the word lines—at the left or at the right next to the cell fields in the above-mentioned sense amplifier regions (and above or below regions adjacent thereto).

The control signals (MUX_(R) or MUX_(L) signal, respectively) applied at the MUX lines are driven by a driver device (MUX driver device) connected with the corresponding MUX line, said driver device being arranged in a region positioned below or above (or at the right or at the left of) all cell fields of the corresponding array, e.g. a segment control region (i.e. an edge region of the array).

The MUX lines may be relatively long. This results in relatively large signal delays of the control signals (MUX signals) applied at the MUX lines, and to a relatively low switching rate during the connecting and/or disconnecting of the sense amplifiers to or from the corresponding cell field (or the bit line assigned to the corresponding cell field, respectively).

SUMMARY OF THE INVENTION

The invention provides a novel sense amplifier connecting/disconnecting circuit arrangement, and a novel method for operating a sense amplifier connecting/disconnecting circuit arrangement.

In one embodiment of the invention, there is a sense amplifier connecting/disconnecting circuit arrangement, in particular for a semiconductor memory device, is provided, including a switching device for connecting a sense amplifier device to a bit line or to a cell field region, respectively, and for disconnecting the sense amplifier device from the bit line or from the cell field region, respectively, as a function of the state of a control signal (MUXL, MUXR) applied at a control line, a driver device for driving the control signal (MUXL, MUXR), where an additional device, in particular an additional switch, is provided, by means of which a change of state of the control signal (MUXL, MUXR) applied at the control line can be effected.

Advantageously, the additional device, in particular the additional switch, is positioned—in contrast to the driver device—relatively close to the sense amplifier device.

By the—additional—providing of the switch, the corresponding sense amplifier device can—other than with prior art—be disconnected from the corresponding cell field region (or the corresponding bit line, respectively) relatively quickly.

BRIEF DESCRIPTION OF THE DRAWINGS

In the following, the invention will be explained in detail with respect to exemplary embodiments and the enclosed drawings. In the drawings:

FIG. 1 shows a schematic representation of the construction of a semiconductor memory device with a plurality of arrays, and of a memory controller according to a first and a second embodiment of the present invention.

FIG. 2 shows a schematic detail representation of the construction of a section of one of the arrays of the semiconductor memory device illustrated in FIG. 1.

FIG. 3 a schematic representation of a shared sense amplifier provided in corresponding sense amplifier regions of the array or array section illustrated in FIGS. 1 and 2.

FIG. 4 shows a circuit arrangement used in accordance with the first embodiment of the invention for the quick disconnecting of the MUX control lines illustrated in FIG. 3.

FIG. 5 shows a schematic detail representation of the MUX control line driver devices illustrated in FIG. 4 and FIG. 6.

FIG. 6 shows a circuit arrangement used in accordance with the second embodiment of the invention for the quick disconnecting of the MUX control lines illustrated in FIG. 3.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 is a schematic representation of the construction of a semiconductor memory device 1 or a semiconductor memory chip, respectively, and of a—central—memory controller 5.

The semiconductor memory device 1 may, for instance, be a table memory device based on CMOS technology, e.g. a RAM memory device (RAM=Random Access Memory or write-read memory, respectively), in particular a DRAM memory device (DRAM=Dynamic Random Access Memory or dynamic write-read memory, respectively).

In the semiconductor memory device 1—after the input of a corresponding address (e.g. by the memory controller 5)—data may be stored under the respective address, and may be read out again later under this address.

The address may be input in several steps, e.g. two successive steps (e.g. first of all a row address—and possibly parts of a column address) (and/or possibly further address parts, or parts thereof)—, and then the column address (or the remaining parts of the column address, respectively, and/or—only now—the above-mentioned further address parts (or the remaining parts thereof, respectively)).

By applying an appropriate control signal (e.g. a read/write signal)—e.g. by the memory controller 5—there may be selected whether data are to be stored or to be read out.

The data input in the semiconductor memory device 1 are, as will be explained in more detail in the following, stored in corresponding memory cells there, and are read out from the corresponding memory cells later again.

Every memory cell consists e.g. of few elements, in particular only of one single, correspondingly controlled capacitor, with the capacitance of which one bit each can be stored as charge.

As results from FIG. 1, a particular number of memory cells each is arranged—in a plurality of rows and columns side by side—in a rectangular or square array (memory bank) 3 a, 3 b, 3 c, 3 d, so that e.g. every 32 MBit, 64 MBit, 128 MBit, 256 MBit, etc. can be stored in an array 3 a, 3 b, 3 c, 3 d—corresponding to the number of memory cells contained.

As is further illustrated in FIG. 1, the semiconductor memory device 1 comprises a plurality of, e.g. four, memory cell arrays 3 a, 3 b, 3 c, 3 d (here: the memory banks 0-3), each being of substantially identical construction and being distributed regularly over the area of the device, and being controlled substantially independently of one another by the above-mentioned memory controller 5, so that a total storage capacity of e.g. 128 MBit, 256 MBit, 512 MBit, or 1024 MBit (or 1 GBit, respectively) correspondingly results for the semiconductor memory device 1.

By providing a plurality of substantially independent arrays 3 a, 3 b, 3 c, 3 d there can be achieved that corresponding write or read accesses can be performed—in parallel or overlapping in time—with a plurality of different arrays 3 a, 3 b, 3 c, 3 d.

The above-mentioned address (input in the semiconductor memory device 1 or the memory controller 5, respectively) comprises—as a part of the above-mentioned further address parts—a corresponding number of (here e.g. two) bits (array selection bits or bank address bits, respectively) serving to address the respectively desired array 3 a, 3 b, 3 c, 3 d during the storing or reading out of data.

As will be explained in more detail in the following, the above-mentioned memory cells are arranged in the arrays 3 a, 3 b, 3 c, 3 d each in corresponding cell fields or cell field regions 7 a, 7 b, 7 c, 7 d that are positioned vertically one on top of the other or horizontally side by side, respectively (cf. e.g. the cell field regions 7 a, 7 b, 7 c, 7 d illustrated by way of example in FIG. 2, and a plurality of further cell field regions—not illustrated—positioned at the right or at the left, and above or below the cell field regions 7 a, 7 b, 7 c, 7 d in the representation pursuant to FIG. 2).

The cell field regions 7 a, 7 b, 7 c, 7 d each are of substantially identical construction, substantially of rectangular (or e.g. square) design, and each comprise a particular number of memory cells positioned side by side in a plurality of rows and columns.

Between every two cell fields 7 a, 7 b, 7 c, 7 d (or—in the representation pursuant to FIG. 2—at the left or at the right of a cell field 7 a, 7 b, 7 c, 7 d, respectively) there are positioned—here also substantially rectangular—sense amplifier regions 10 a, 10 b, 10 c, 10 d, 10 e, 10 f. In each of the sense amplifier regions 10 a, 10 b, 10 c, 10 d, 10 e, 10 f a plurality of sense amplifiers 11 are arranged, wherein the corresponding sense amplifiers 11 (or more exactly: the sense amplifiers 11 arranged in the sense amplifier regions 10 a, 10 b, 10 c, 10 d, 10 e, 10 f positioned between every two different cell fields 7 a, 7 b, 7 c, 7 d) each are assigned to two different cell fields 7 a, 7 b, 7 c, 7 d (namely the cell fields 7 a, 7 b directly adjacent to the corresponding sense amplifier region—e.g. the sense amplifier region 10 b—, etc.). In the present embodiments, so-called shared sense amplifiers 11 are thus used.

As results from FIG. 1, each array comprises a—here also substantially rectangular—array controller 6 a, 6 b, 6 c, 6 d (bank control) separately assigned to the respective array 3 a, 3 b, 3 c, 3 d, the array controller 6 a, 6 b, 6 c, 6 d being positioned in an edge region of the respective array 3 a, 3 b, 3 c, 3 d.

In accordance with FIG. 2, segment or word line driver regions 8 a, 8 b, 8 c, 8 d—here also of substantially rectangular design—are positioned between every two cell fields 7 a, 7 b, 7 c, 7 d (or—in the representation pursuant to FIG. 2—above or below a cell field 7 a, 7 b, 7 c, 7 d, respectively.).

In each of the segment driver regions 8 a, 8 b, 8 c, 8 d, a plurality of corresponding segment or word line driver means are arranged.

As results from FIG. 1 and FIG. 2, at an edge region of the respective array 3 a, 3 b, 3 c, 3 d—here positioned below (or above, respectively)—(or alternatively e.g. at the right (or at the left, respectively)) of the corresponding cell fields 7 a, 7 c or 7 b, 7 d, respectively, there is positioned a segment or word line control region 9 a, 9 b, 9 c, 9 d in which—as will be explained in more detail below corresponding MUX control line driver device 20 a, 20 b are arranged (cf. e.g. also FIG. 4).

As results from FIG. 2, within each cell field region 7 a, 7 b, 7 c, 7 d there extend (e.g. from the segment driver region 8 a, 8 b, 8 c, 8 d respectively assigned to the respective cell field region 7 a, 7 b, 7 c, 7 d) a plurality of word lines 12 (in FIG. 2, only one single word line, namely the word line WL, is illustrated for the sake of clarity). The number of word lines 12 provided per cell field region 7 a, 7 b, 7 c, 7 d may, for instance, correspond to the number of memory cell rows in the respective cell field region 7 a, 7 b, 7 c, 7 d (or e.g.—for instance in the case of simultaneous reading out/storing of respectively several, e.g. 2, 4, or 8 bits—to a fraction thereof (e.g. half, a quarter, or an eighth)).

The individual word lines 12 are—equidistantly—arranged in parallel to one another (and extend parallel to the outer edge of the respective cell field region 7 a, 7 b, 7 c, 7 d).

As results further from FIG. 2 and FIG. 3, there extend within each cell field region 7 a, 7 b, 7 c, 7 d (e.g. from the sense amplifier regions 10 a, 10 b, 10 c, 10 d respectively assigned to the respective cell field region 7 a, 7 b, 7 c, 7 d) a plurality of bit lines 13 a, 13 b, 13 c, 13 d (in FIG. 2 only one single bit line, namely the bit line BL, is illustrated for the sake of clarity, and in FIG. 3 the bit lines BLLt, BLLc, BLRt und BLRc).

The number of bit lines 12 provided per cell field region 7 a, 7 b, 7 c, 7 d may, for instance, correspond to the number of memory cell columns in the respective cell field region 7 a, 7 b, 7 c, 7 d, or e.g. to a multiple thereof.

The individual bit lines or bit line pairs 13 a, 13 b or 13 c, 13 d, respectively, are—equidistantly—arranged in parallel to one another (and extend parallel to the outer edge of the respective cell field region 7 a, 7 b, 7 c, 7 d, and perpendicular to the above-mentioned word lines 12).

The—central—memory controller 5 may—as is illustrated by way of example in FIG. 1—be designed as a separate semiconductor device communicating with the DRAM semiconductor memory device 1 via external pins.

Alternatively, the memory controller 5 may e.g. also be arranged on one and the same chip 1 as the above-mentioned memory cell arrays 3 a, 3 b, 3 c, 3 d (memory banks 0-3).

In order to perform a write or read access in the semiconductor memory device 1, a particular, predetermined sequence of instructions must be gone through:

For instance, by means of a word line activating instruction (activate instruction (ACT)), a corresponding word line 12 or row of memory cells, respectively, assigned to a particular array 3 a, 3 b, 3 c, 3 d determined by the above-mentioned address (in particular the above-mentioned array selection bits or bank address bits, respectively) (and also defined by the above-mentioned address, in particular the respective row address) is activated.

This is e.g. effected by that—as is illustrated in FIG. 1—a corresponding word line activating instruction signal (ACT signal) is transmitted from the memory controller 5 via a control line 4 a, 4 b, 4 c, 4 d of a control line data bus 4—assigned to the respective array 3 a, 3 b, 3 c, 3 d to be addressed (or the array controllers 6 a, 6 b, 6 c, 6 d thereof)—(or alternatively e.g. to all arrays 3 a, 3 b, 3 c, 3 d (or array controllers 6 a, 6 b, 6 c, 6 d) of the semiconductor memory device 1) (and—e.g. simultaneously—the above-mentioned address).

As has already been explained above, a plurality of sense amplifiers 11 is arranged in each of the sense amplifier regions 10 a, 10 b, 10 c, 10 d, 10 e, 10 f of the respective array 3 a, 3 b, 3 c, 3 d, wherein the corresponding sense amplifiers 11 (or more exactly: the sense amplifiers arranged in the sense amplifier regions 10 b, 10 c positioned between two different cell field regions 7 a, 7 b, 7 c, 7 d positioned side by side) each are assigned to two different cell field regions 7 a, 7 b, 7 c, 7 d (namely the cell field regions 7 a, 7 b, etc. directly adjacent to the corresponding sense amplifier region 10 b).

Therefore, it must be ensured (e.g. by the memory controller 5) that word lines 12 are not activated—in parallel or simultaneously—that are assigned to two different cell field regions 7 a, 7 b which are, however, adjacent to one and the same sense amplifier region 10 b, or—in parallel or simultaneously—cell field regions 7 a, 7 b adjacent to one and the same sense amplifier region 10 b (word lines 12 in at most every second cell field region 7 a, 7 b—positioned side by side at the right or at the left, respectively, in the representation pursuant to FIG. 2—, or—alternatively—e.g. only one word line each per array 3 a, 3 b, 3 c, 3 d).

In response to the receipt of the above-mentioned word line activating instruction signal (ACT signal), the respective array controller 6 a, 6 b, 6 c, 6 d provided separately for each array 3 a, 3 b, 3 c, 3 d and receiving the respective ACT signal, causes the data values stored in the respective row—defined by the respective row address—of memory cells arranged in the corresponding cell field region 7 a, 7 b, 7 c, 7 d to be read out from the sense amplifiers 11—assigned to the corresponding word line 12—of the respective sense amplifier region 10 a, 10 b, 10 c, 10 d, 10 e, 10 f (“activated state” of the word line 12).

This word line 12 is kept in the activated state until an access to a further word line—arranged in the same array 3 a, 3 b, 3 c, 3 d—is to be performed, or—alternatively—until an access to a further word line of a further cell field region 7 a, 7 b, 7 c, 7 d is to be performed, which is adjacent to one and the same sense amplifier region 10 b, such as the cell field region 7 a, 7 b, 7 c, 7 d of the—as explained above—activated word line 12 (or to a further word line—differing from the activated word line 12—in the same cell field region 7 a, 7 b, 7 c, 7 d as the activated word line 12).

Then—by means of a word line deactivating instruction (e.g. a precharge instruction (PRE instruction)) transmitted via a control line assigned to the respective array 3 a, 3 b, 3 c, 3 d to be addressed (or the array controller 6 a, 6 b, 6 c, 6 d thereof) (or alternatively e.g. to arrays 3 a, 3 b, 3 c, 3 d (or array controllers 6 a, 6 b, 6 c, 6 d) of the semiconductor memory device 1)—the corresponding word line 12 deactivated again, and the corresponding array 3 a, 3 b, 3 c, 3 d is prepared for the next word line activating instruction (activate instruction (ACT)).

As long as the word line 12 is left in the above-mentioned activated state, the memory controller 5 of the semiconductor memory device 1 will not send a corresponding word line deactivating instruction signal (precharge or PRE instruction signal) characterizing the word line 12 to be deactivated with a corresponding address.

E.g. one or two clocks after the above-mentioned word line activating signal (ACT signal), the memory controller 5 sends, via a control line assigned to the respective array 3 a, 3 b, 3 c, 3 d to be addressed (or the array controller 6 a, 6 b, 6 c, 6 d thereof) (or alternatively e.g. to arrays 3 a, 3 b, 3 c, 3 d (or array controllers 6 a, 6 b, 6 c, 6 d, respectively) of the semiconductor memory device 1) a corresponding read or write instruction signal (Read (RD) or Write (WT) instruction signal).

In response to the receipt of the above-mentioned read or write instruction signal (Read (RD) or Write (WT) instruction signal), the respective array controller 6 a, 6 b, 6 c, 6 d provided separately for each array 3 a, 3 b, 3 c, 3 d and receiving the respective RD (or WT) instruction signal, causes the corresponding data—then exactly specified by the corresponding column address—to be correspondingly output by the corresponding sense amplifier(s) 11 assigned to the bit line BL or the bit line pair BLLt, BLLc or BLRt, BLRc, respectively, specified by the column address (or—vice versa—the data to be read into the corresponding memory cells).

As already explained above, the sense amplifiers 11 each are arranged in a sense amplifier region 10 positioned between two cell field regions 7 a, 7 b, wherein—for reasons of space—one and the same sense amplifier 11 is assigned to two different cell field regions 7 a, 7 b each (namely the two cell field regions 7 a, 7 b directly adjacent to the corresponding sense amplifier region 10 b) (so-called shared sense amplifiers).

Depending on whether—in the representation pursuant to FIG. 2 and FIG. 3—data are to be read out from the cell field region 7 a, 7 b positioned at the right or at the left next to the respective sense amplifier 11, the corresponding sense amplifier 11 is connected by means of corresponding switches 14 a, 14 b, 14 c, 14 d (here: corresponding transistors 14 a, 14 b, 14 c, 14 d positioned in the same sense amplifier region 10 b as the respectively assigned sense amplifier 11) to the corresponding cell field region 7 a or 7 b (in particular to the corresponding bit line (BL) or bit line pair 13 a, 13 b or 13 c, 13 d (BLLt, BLLc or BLRt, BLRc) assigned to the respective cell field region 7 a or 7 b) (or is—by switching on the corresponding switches or transistors 14 a, 14 b or 14 c, 14 d—electrically connected with the corresponding cell field region 7 a or 7 b, in particular the corresponding bit line (BL) or bit line pair 13 a, 13 b or 13 c, 13 d (BLLt, BLLc or BLRt, BLRc) positioned in the respective cell field region 7 a or 7 b), or is disconnected from the corresponding cell field region 7 a or 7 b (or the corresponding bit line (BL) or bit line pair 13 a, 13 b or 13 c, 13 d (BLLt, BLLc or BLRt, BLRc) assigned to the respective cell field region 7 a or 7 b) (or is—by switching off the corresponding switches or transistors 14 a, 14 b or 14 c, 14 d—electrically disconnected from the corresponding cell field region 7 a or 7 b (or the corresponding bit line (BL) or bit line pair 13 a, 13 b or 13 c, 13 d (BLLt, BLLc or BLRt, BLRc) positioned in the respective cell field region 7 a or 7 b).

To this end, according to FIG. 3, the transistors 14 a, 14 b are switched on in parallel or simultaneously (and the transistors 14 c, 14 d are switched off), or the transistors 14 c, 14 d are switched on in parallel or simultaneously (and the transistors 14 a, 14 b are switched off).

The corresponding switches, in particular transistors 14 a, 14 b or 14 c, 14 d (which are correspondingly switched on or off, as explained above), effecting the connecting or disconnecting of the cell field regions 7 a or 7 b or of the bit line/the bit line pair 13 a, 13 b or 13 c, 13 d, respectively, to or from the corresponding sense amplifier 11, are controlled by a corresponding control line 15, 16.

Whenever a “logically high” signal (i.e. a “logically high” MUXL signal for the transistors 14 a, 14 b—positioned at the left of the sense amplifier 11 in the representation of FIG. 3—, or a “logically high” MUXR signal for the transistors 14 c, 14 d—positioned at the right of the sense amplifier 11 in the representation of FIG. 3—) is applied at the control line 15 or 16, respectively that is connected with a corresponding control input of the transistors 14 a, 14 b or 14 c, 14 d, respectively, the corresponding transistors 14 a, 14 b or 14 c, 14 d, respectively, are switched on (i.e. the sense amplifier 11 is electrically connected with the bit line pair 13 a, 13 b or 13 c, 13 d, respectively, and, as will be explained in more detail below, with a corresponding equalizer or a corresponding equalizer device 17 or 18, respectively).

Correspondingly vice versa, whenever a “logically low” signal (i.e. a “logically low” MUXL signal for the transistors 14 a, 14 b—positioned at the left of the sense amplifier 11 in the representation of FIG. 3—, or a “logically low” MUXR signal for the transistors 14 c, 14 d—positioned at the right of the sense amplifier 11 in the representation of FIG. 3—) is applied at the corresponding control line 15 or 16, respectively, the corresponding transistors 14 a, 14 b or 14 c, 14 d, respectively, are switched off (i.e. the sense amplifier 11 is electrically disconnected from the bit line pair 13 a, 13 b or 13 c, 13 d, respectively, and, as will be explained in more detail below, from the corresponding equalizer or a corresponding equalizer device 17 or 18, respectively).

The—in the representation of FIG. 3—control lines 15 of the sense amplifiers 11 of one and the same sense amplifier region 10 b, positioned “at the left” of the corresponding sense amplifiers 11 (as well as—alternatively—additionally the corresponding “left” control lines of the sense amplifiers of the sense amplifier regions 10 e positioned, in the representation of FIG. 2, above or below the corresponding sense amplifier region 10 b, respectively) are, pursuant to FIG. 4, connected to a—central—control line 21 (MUXL line 21), and the—in the representation of FIG. 3—control lines 16 of all the sense amplifiers 11 of the corresponding sense amplifier region 10 b, positioned “at the right” of the corresponding sense amplifiers 11 (as well as—alternatively—additionally the corresponding “right” control lines of the sense amplifiers of the sense amplifier regions 10 e positioned, in the representation of FIG. 2, above or below the corresponding sense amplifier region 10 b, respectively) to a further—central—control line 22 (MUXR line 22).

The MUXL line 21 extends—parallel to the word lines 12, and positioned at the left of the corresponding sense amplifiers 11 in the representation of FIG. 3—over the entire length of the sense amplifier region 10 b assigned to the respective sense amplifiers 11 (and—therebeyond—(in the representations of FIG. 2 and FIG. 4) downwards in the direction of the segment or word line control region 9 a, 9 b, 9 c, 9 d in which—as has already been explained above—corresponding MUX control line driver devices 20 a, 20 b are arranged, and extends—alternatively—passing through further sense amplifier regions 10 e positioned above the sense amplifier region 10 b—in addition also upwards (i.e. over the entire length of corresponding—not illustrated—master word lines (MWL))).

Correspondingly, the MUXR line 22 extends—parallel to the word lines 12, and positioned at the right of the corresponding sense amplifiers 11 in the representation of FIG. 3—over the entire length of the sense amplifier region 10 b assigned to the respective sense amplifiers 11 (and—therebeyond—(in the representations of FIG. 2 and FIG. 4) downwards in the direction of the segment or word line control region 9 a, 9 b, 9 c, 9 d, in which—as has already been explained above—corresponding MUX control line driver devices 20 a, 20 b are arranged, and extends—alternatively—passing through further sense amplifier regions 10 e positioned above the sense amplifier region 10 b—in addition also upwards (i.e. over the entire length of corresponding—not illustrated—master word lines (MWL))).

The MUXL line 21 is connected to the (central) MUX control line driver device 20 a, and the MUXR line 22 is connected to the (central) MUX control line driver device 20 b.

As is illustrated in FIG. 5, each MUX control line driver device 20 a, 20 b comprises three transistors 24 a, 24 b, 24 c adapted to be controlled separately by means of corresponding signals at corresponding transistor control lines 23 a, 23 b, 23 c (namely an n-channel MOSFET 24 c, and—connected in series thereto—two p-channel MOSFETS 24 a, 24 b connected in parallel).

The n-channel MOSFET 24 c is connected with the mass potential via a line 25 a, and—via a line 25 b—with the corresponding MUXL or MUXR line 21 or 22, and—via lines 25 c or 25 d, respectively,—with the p-channel MOSFET 24 a and the p-channel MOSFET 24 b.

The p-channel MOSFET 24 b is connected via a line 25 e to a (first) supply voltage—having a first voltage level—, and the p-channel MOSFET 24 a is connected via a line 25 f to a (second) supply voltage—having a second voltage level differing from the first voltage level.

If—by means of a corresponding signal applied at the transistor control line 23 c—the n-channel MOSFET 24 c is placed in a conductive state, and—by means of corresponding signals applied at the transistor control lines 23 a, 23 b—the p-channel MOSFETs 24 a, 24 b are placed in a locked state, a “logically low” MUXL or MUXR signal, respectively, is output at the corresponding MUXL or MUXR line 21 or 22 (and thus also at the control lines 15 or 16 connected thereto and shown in FIG. 3).

Accordingly, if—by means of a corresponding signal applied at the transistor control line 23 c—the n-channel MOSFET 24 c is placed in a locked state, and—by means of corresponding signals applied at the transistor control lines 23 a, 23 b—the p-channel MOSFET 24 b is placed in a conductive state and the p-channel MOSFET 24 a is placed in a locked state, a “logically high” MUXL or MUXR signal, respectively, having the above-mentioned first voltage level, is output at the corresponding MUXL or MUXR line 21 or 22 (and thus also at the control lines 15 or 16 connected thereto and shown in FIG. 3).

Correspondingly, if—by means of a corresponding signal applied at the transistor control line 23 c—the n-channel MOSFET 24 c is placed in a locked state, and—by means of corresponding signals applied at the transistor control lines 23 a, 23 b—the p-channel MOSFET 24 a is placed in a conductive state and the p-channel MOSFET 24 b is placed in a locked state, a “logically high” MUXL or MUXR signal, respectively, having the second voltage level differing from the first voltage level, is output at the corresponding MUXL or MUXR line 21 or 22 (and thus also at the control lines 15 or 16 connected thereto and shown in FIG. 3).

In order to be able to quickly place the MUXL or MUXR signal, respectively, from a “logically high” to a “logically low” state, there are, as is e.g. illustrated in FIG. 4,—except from the central n-channel MOSFET 24 c that will then have to be placed in a conductive state and that is provided in the MUX control line driver device 20 a or 20 b, respectively—provided one or more additional switches each positioned locally adjacent to the respective sense amplifiers 11 or the corresponding sense amplifier regions 10 b, 10 e, respectively, in particular transistors 26, 27 (here: corresponding n-channel MOSFETS 26, 27).

The transistors 26, 27 may—as is illustrated in FIG. 2—e.g. be arranged in an intersection region 28 between the respective sense amplifier region 10 b—assigned to the respective sense amplifiers 11—and the segment driver regions 8 a, 8 b assigned thereto—i.e. below the corresponding sense amplifiers 11 e.g. illustrated in FIG. 3—(or alternatively e.g. in a further intersection region 29, etc.—positioned in the representation of FIG. 2 above the corresponding sense amplifier region 10 b—, or—with a further alternative—e.g. within the corresponding sense amplifier region 10 b, etc.).

For each MUXL or MUXR line 21, 22, respectively, there may—as is illustrated in FIG. 4—be provided one single, local transistor 26 or 27, respectively, or—alternatively—a plurality of transistors—connected correspondingly similar to the transistors 26 or 27, respectively, illustrated in FIG. 4—(said transistors each being e.g. positioned in one single intersection region 28 (or sense amplifier region 10 b), or—preferably—being distributed in a plurality of (preferably all) intersection regions 28, 29 (or sense amplifier regions 10 b, 10 c) passed through by the lines 21, 22, wherein in each intersection region 28, 29 (or sense amplifier region 10 b, 10 c)—for each of the lines 21, 22—e.g. one single transistor, or several transistors—connected correspondingly similar to the transistors 26, 27 illustrated in FIG. 4—may be provided.

As results from FIG. 4, the transistor 26—which is adapted to draw the MUXL line 21 locally downwards or to a logically low state, respectively—(and possibly the above-mentioned further, additional transistors which are adapted to—additionally—draw the MUXL line 21 locally downwards or to a logically low state, respectively) is, by means of a line 30 a (or the possibly provided, additional transistors are, by means of corresponding, further lines) connected to the MUXL line 21, and—by means of a line 30 b (or the possibly provided, additional transistors by means of corresponding, further lines)—to the mass potential.

Correspondingly similar, the transistor 27—which is adapted to draw the MUXR line 22 locally downwards or to a logically low state, respectively—(and possibly the above-mentioned further, additional transistors which are adapted to—additionally—draw the MUXR line 22 downwards or to a logically low state, respectively) is, by means of a line 31 a (or the possibly provided, additional transistors are, by means of corresponding, further lines) connected to the MUXR line 22, and—by means of a line 31 b (or the possibly provided, additional transistors by means of corresponding, further lines)—to the mass potential. The transistors 26, 27 (and the possibly provided, further transistors) are adapted to draw the MUXL or MUXR line 21, 22, respectively,—together with the corresponding MUX control line driver devices 20 a, 20 b (or, alternatively, independently thereof)—locally downwards or to a logically low state, respectively, by the fact that the corresponding transistors 26, 27 are placed in a conductive state, i.e. are switched on.

To this end, a logically high control signal is applied to a control line input—connected with a corresponding transistor control line 30 c or 31 c, respectively—of the corresponding transistor 26 or 27, respectively.

This renders it possible to quickly draw the MUXL or the MUXR signal, respectively, downwards or to a logically low state, respectively, without complete intermediate amplifiers having to be provided in the respective intersection regions 28 (or sense amplifier regions 10 b) (the intermediate amplifiers having—other than the transistors 26, 27—to be connected, except with the mass potential, additionally, e.g. via one or a plurality of further transistors, with the above-mentioned first supply voltage having the first voltage level (and possibly additionally with the above-mentioned second supply voltage having the above-mentioned second, differing voltage level).

Advantageously, the same signals can be used as control signals for the transistors 26, 27 as are used for controlling the above-mentioned equalizer devices 17, 18 illustrated in FIG. 3.

In particular—for controlling the transistors 27 drawing the MUXR line 22, 16 downwards or to a logically low state, respectively—an EQLL signal can be used that is applied at a control line 32—positioned at the left of the corresponding sense amplifiers 11—and is used to control the equalizer devices 17 positioned at the left of the corresponding sense amplifiers 11 and opposite to the MUXR line 16, 22 that is, in the representation of FIGS. 3 and 4, positioned at the right of the corresponding sense amplifiers 11.

Correspondingly—for controlling the transistor 26 drawing the MUXL line 21, 15 downwards or to a logically low state, respectively—an EQLR signal can be used that is applied at a control line 33—positioned at the right of the corresponding sense amplifiers 11—and is used to control the equalizer devices 18 positioned at the right of the corresponding sense amplifiers 11 and opposite to the MUXL line 15, 21 that is, in the representation of FIGS. 3 and 4, positioned at the left of the corresponding sense amplifiers 11.

By means of the equalizer devices 17, 18—correspondingly similar as with conventional equalizer devices 17, 18—depending on the state of the EQLL or EQLR signal applied at the control lines 32 or 33, respectively—either i) the sense amplifier 11 assigned to the respective equalizer device 17, 18 is kept in a “precharge state” (wherein the corresponding cell field region 7 a, 7 b cannot be activated), or ii) the sense amplifier 11 assigned to the respective equalizer device 17, 18 is released again from the “precharge state” (so that the corresponding cell field region 7 a, 7 b may then be activated).

Instead of with the above-mentioned EQLL or EQLR signals, respectively, applied at the control lines 32 or 33, respectively, in the case of a second, alternative embodiment illustrated in FIG. 6, transistors 26 a, 27 a, 26 b, 27 b, 26 c, 27 c—corresponding to the transistors 26, 27 illustrated in FIG. 4—may also be controlled by a control signal CON or /CON, respectively, the signal being generated separately or individually for controlling the transistors 26 a, 27 a, 26 b, 27 b, 26 c, 27 c, being inverted by an inverter 34, and being supplied to the control connections of the transistors 26 a, 27 a, 26 b, 27 b, 26 c, 27 c via transistor control lines 35 corresponding to the transistor control lines 30 c, 31 c.

In this embodiment, the local driver is provided at the beginning of the master word line (MWL)—as is indicated in FIG. 6—with an (additional) switch (—here: the transistor 26 a, 27 a—) (which is adapted to very quickly draw the MUXL or MUXR line 21, 22, respectively—driven centrally by the MUX control line driver device 20 a, 20 b—downwards at the beginning of the master word line (MWL)). Furthermore, further switches (—here: the transistors 26 b, 27 b, 26 c, 27 c, etc.—) are—additionally—provided—corresponding to the above-mentioned first embodiment—in the intersection regions 28 between corresponding segment driver regions 8 a, 8 b and corresponding sense amplifier regions 10 b, this rendering it possible that—also along the master word line (MWL)—the MUXL or MUXR line 21, 22 can be drawn downwards quickly. 

1. A sense amplifier connecting/disconnecting circuit arrangement for a semiconductor memory device, comprising: a switching device for connecting a sense amplifier device to a bit line or to a cell field region, respectively, and for disconnecting the sense amplifier device from the bit line or from the cell field region, respectively, as a function of a state of a control signal applied at a control line; a driver device for driving the control signal; and an additional switch, by means of which a change of state of the control signal applied at the control line can be effected.
 2. The sense amplifier connecting/disconnecting circuit arrangement according to claim 1, wherein the additional switch is positioned substantially close to a sense amplifier device region in which the sense amplifier device is positioned, or in a region adjacent thereto.
 3. The sense amplifier connecting/disconnecting circuit arrangement according to claim 2, wherein the region adjacent to the sense amplifier region is an intersection region between the sense amplifier region and a segment driver region.
 4. The sense amplifier connecting/disconnecting circuit arrangement according to claim 1, wherein the driver device is positioned substantially remote from the sense amplifier device compared to the additional switch.
 5. The sense amplifier connecting/disconnecting circuit arrangement according to claim 1, wherein the driver device is positioned in an edge region of a memory cell array in which the sense amplifier device is positioned, or outside the memory cell array.
 6. The sense amplifier connecting/disconnecting circuit arrangement according to claim 1, wherein the additional switch comprises a transistor.
 7. The sense amplifier connecting/disconnecting circuit arrangement according to claim 6, wherein the transistor is connected between the control line and aground or a mass potential, respectively.
 8. The sense amplifier connecting/disconnecting circuit arrangement according to claim 1, wherein the additional switch is adapted to effect a change of state on the control line from logically high to logically low, but not a change of state on the control line from logically low to logically high.
 9. The sense amplifier connecting/disconnecting circuit arrangement according to claim 1, wherein signals used in an equalizer device adapted to be connected with the sense amplifier device are used as control signals for the additional switch.
 10. A method for operating a sense amplifier connecting/disconnecting circuit arrangement for a semiconductor memory device, the arrangement comprising a switching device for connecting a sense amplifier device to a bit line or to a cell field region, respectively, and for disconnecting the sense amplifier device from the bit line or from the cell field region, respectively, as a function of a state of a control signal applied at a control line and driven by a driver device, the method comprising: producing a change of the state of the control signal applied at the control line by means of an additional switch provided in addition to the driver device. 